Coherence time of decoupled nuclear spins in silicon
نویسندگان
چکیده
منابع مشابه
Polarizing Nuclear Spins in Silicon Carbide
Quantum computers and other quantum information processing (QIP) devices—such as simulators, sensors, and communication channels—hold the promise to deliver performances not attainable by classical systems. Unfortunately, the qubits used to store information are usually fragile and difficult to manipulate and engineer, thus forestalling advances in the field. Many qubit candidates suffer from s...
متن کاملOptical Polarization of Nuclear Spins in Silicon Carbide.
We demonstrate optically pumped dynamic nuclear polarization of (29)Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H- and 6H-SiC. The 99%±1% degree of polarization that we observe at room temperature corresponds to an effective nuclear temperature of 5 μK. By combining ab initio theory with the experimental identification of the color centers' optically excited st...
متن کاملNuclear spins of ionized phosphorus donors in silicon.
We demonstrate the coherent control and electrical readout of ionized phosphorus donor nuclear spins in (nat)Si. By combining time-programed optical excitation with coherent electron spin manipulation, we selectively ionize the donors depending on their nuclear spin state, exploiting a spin-dependent recombination process at the Si/SiO(2) interface, and find a nuclear spin coherence time of 18 ...
متن کاملNuclear spins in nanostructures
We review recent theoretical and experimental advances toward understanding the effects of nuclear spins in confined nanostructures. These systems, which include quantum dots, defect centers, and molecular magnets, are particularly interesting for their importance in quantum information processing devices, which aim to coherently manipulate single electron spins with high precision. On one hand...
متن کاملCoherent storage of photoexcited triplet states using 29Si nuclear spins in silicon.
Pulsed electron paramagnetic resonance spectroscopy of the photoexcited, metastable triplet state of the oxygen-vacancy center in silicon reveals that the lifetime of the m(s)=±1 sublevels differs significantly from that of the m(s)=0 state. We exploit this significant difference in decay rates to the ground singlet state to achieve nearly ~100% electron-spin polarization within the triplet. We...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2005
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.71.014401